Siting of antimony dopants and gallium in Ba(8)Ga(16)Ge(30) clathrates grown from gallium flux.

Thermal stability and thermoelectric properties of p-type Ba8Ga16Ge30 clathrates

The thermal stability of p-type Ba8Ga16Ge30 clathrates grown from gallium flux has been tested by heat treatment in low pressure Ar atmosphere at 400, 600, and 800 °C. Significant gallium loss was observed for all samples during heat treatment. The treatment at 400 °C does not significantly change the sample properties, and the samples remain p-type and comparable to the untreated, as-prepared,...

EXAFS study of n- and p-type Ba8Ga16Ge30

We report extended x-ray absorption fine-structure EXAFS studies of nand p-type Ba8Ga16Ge30 samples type-I clathrate at the Ga, Ge, and Ba K edges, to probe the local structure, particularly around the Ba atoms located inside 20and 24-atom cages Ba1 and Ba2 sites, respectively composed of Ga/Ge atoms. In agreement with diffraction analysis, we find Ba2 is off center, with a component in the bc ...

The effect of Ga-doping on the structural and optical properties of ZnO thin films prepared by spray pyrolysis

In this research, zinc oxide thin films with gallium impurity have been deposited using the spray pyrolysis technique. The structural and optical properties of these films are investigated as a function of gallium doping concentrations. The ZnO and ZnO:Ga  films grown at a substrate temperature of 350 ºC with gallium doping concentrations from 1.0 to 5.0.%. The XRD analysis indicated that ZnO f...

Green Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature

Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C). Gallium metal (Ga) and nitrogen (N) plasma wereused as precursors. The morphology and structure of the grown GaN NS werecharacterized by field emission scanning electron microscope (FE-SEM), transmissionelectro...

Direct Experimental Evidence for Atomic Tunneling of Europium in Crystalline Eu₈Ga₁₆Ge₃₀